Studies of Cd-vacancies, indium dopant and impurities in CdZnTe crystals (Zn = 10%)

2003 IEEE Nuclear Science Symposium. Conference Record (IEEE Cat. No.03CH37515) Pub Date : 2003-10-19 DOI:10.1109/NSSMIC.2003.1352620

Longxia Li, F. Lu, Chun Lee, Honglin Ding, Wangchang Zhang, W. Yao, R. James, R. Olsen, A. Burger, G. Wright, D. Rhiger, K. Shah, M. Squillante, L. Cirignano, Hadong Kim, V. Ivanov, P. Luke

{"title":"Studies of Cd-vacancies, indium dopant and impurities in CdZnTe crystals (Zn = 10%)","authors":"Longxia Li, F. Lu, Chun Lee, Honglin Ding, Wangchang Zhang, W. Yao, R. James, R. Olsen, A. Burger, G. Wright, D. Rhiger, K. Shah, M. Squillante, L. Cirignano, Hadong Kim, V. Ivanov, P. Luke","doi":"10.1109/NSSMIC.2003.1352620","DOIUrl":null,"url":null,"abstract":"Using modified vertical Bridgman and a seeded technique, 3-inch-diameter CdZnTe (CZT) ingots were successfully grown with 40% of the ingots having single-crystal volumes of over 300 cm/sup 3/, and 80% of the ingots with single-crystal volumes of over 100 cm/sup 3/. High-yield growth of CZT crystals with these dimensions enables the production of novel monolithic, multi-element detectors. Defects such as Cd-vacancies, indium dopant and impurities were studied systematically. The studies show that by appropriately reducing the Cd-vacancy and the Group III dopant, one can increase the /spl mu//spl tau/(e) and /spl mu//spl tau/(h) products. Furthermore, the indium doping and the purity of the CZT were found to limit the value of the /spl mu//spl tau/(e) product. The \"best\" purity source material coupled with an optimized indium doping concentration will produce /spl mu//spl tau/(e) products as high as 1.8x10/sup -2/ cm/sup 2//V (collimated and the \"best\" area), and the best /spl mu//spl tau/(h) is 7x10/sup -4/ cm/sup 2//V.","PeriodicalId":186175,"journal":{"name":"2003 IEEE Nuclear Science Symposium. Conference Record (IEEE Cat. No.03CH37515)","volume":"20 3","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 IEEE Nuclear Science Symposium. Conference Record (IEEE Cat. No.03CH37515)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NSSMIC.2003.1352620","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

Abstract

Using modified vertical Bridgman and a seeded technique, 3-inch-diameter CdZnTe (CZT) ingots were successfully grown with 40% of the ingots having single-crystal volumes of over 300 cm/sup 3/, and 80% of the ingots with single-crystal volumes of over 100 cm/sup 3/. High-yield growth of CZT crystals with these dimensions enables the production of novel monolithic, multi-element detectors. Defects such as Cd-vacancies, indium dopant and impurities were studied systematically. The studies show that by appropriately reducing the Cd-vacancy and the Group III dopant, one can increase the /spl mu//spl tau/(e) and /spl mu//spl tau/(h) products. Furthermore, the indium doping and the purity of the CZT were found to limit the value of the /spl mu//spl tau/(e) product. The "best" purity source material coupled with an optimized indium doping concentration will produce /spl mu//spl tau/(e) products as high as 1.8x10/sup -2/ cm/sup 2//V (collimated and the "best" area), and the best /spl mu//spl tau/(h) is 7x10/sup -4/ cm/sup 2//V.

查看原文本刊更多论文

CdZnTe晶体(Zn = 10%)中cd空位、铟掺杂物及杂质的研究

利用改进的垂直Bridgman和播种技术，成功地生长出了直径3英寸的CdZnTe (CZT)铸锭，其中40%的铸锭单晶体积超过300 cm/sup 3/， 80%的铸锭单晶体积超过100 cm/sup 3/。具有这些尺寸的CZT晶体的高产率生长使新型单片多元素探测器的生产成为可能。系统地研究了镉空位、铟掺杂和杂质等缺陷。研究表明，适当减少cd空位和III族掺杂可以增加/spl mu//spl tau/(e)和/spl mu//spl tau/(h)产物。此外，发现铟掺杂和CZT的纯度限制了/spl mu//spl tau/(e)的值。“最佳”纯度源材料与优化的铟掺杂浓度相结合，可产生高达1.8 × 10/sup -2/ cm/sup 2/ V(准直和“最佳”区域)的/spl mu//spl tau/(e)产品，最佳/spl mu//spl tau/(h)为7 × 10/sup -4/ cm/sup 2/ V。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2003 IEEE Nuclear Science Symposium. Conference Record (IEEE Cat. No.03CH37515)

自引率

0.00%

发文量