A new approach for modelling the thermal behaviour of bipolar transistors

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) Pub Date : 2002-08-07 DOI:10.1109/ICCDCS.2002.1004036

H. Mnif, T. Zimmer, J. Battaglia, B. Ardouin, D. Berger, D. Céli

引用次数: 3

Abstract

A new physical model which describes the self-heating phenomena - the device temperature rise due to its own internal power dissipation - is presented. It permits the accurate temporal response determination of the BJT junction's temperature rise. This model is validated using measurements from an silicon-germanium heterojunction bipolar transistor (Si-Ge HBT).

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一种模拟双极晶体管热行为的新方法

提出了一种新的物理模型来描述器件自身内部功耗引起的温升现象。它允许精确的BJT结温升的时间响应测定。该模型是验证使用测量从硅锗异质结双极晶体管(Si-Ge HBT)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)

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