Measurement of Piezoelectric Properties of Pulsed Laser Deposited Hydroxyapatite Thin Films on Platinum or Titanium Substrate

Tsutomu Nishigaki, H. Nishikawa, M. Kusunoki, S. Hontsu
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引用次数: 6

Abstract

In order to measure the piezoelectric properties of the Hydroxyapatite (HAp) films, we have fabricated Cu/HAp/Ti or Cu/HAp/Pt structure. At first, a 1.5 m thick HAp was deposited on a Ti or Pt substrate using the KrF Pulsed Laser Deposition (PLD) method. After the HAp deposition, the HAp film was crystallized by post-annealing in nitrogen gas atmosphere and cooled slowly in an electric furnace. Then, a Cu top electrode sheet was attached on HAp film. Finally, one end of the Cu/HAp/Ti or Cu/HAp/Pt structure was clamped to compose a vibrating cantilever beam. Piezoelectric coefficients were estimated by output voltage responses of HAp films measured by a operational amplifier circuit when the Cu/HAp/Ti or Cu/HAp/Pt beam was excited by a mini-shaker at the first natural frequency of the beam. The results showed the piezoelectricity of the artificially synthesized HAp films.
脉冲激光沉积羟基磷灰石薄膜在铂或钛基底上的压电性能测量
为了测量羟基磷灰石(HAp)薄膜的压电性能,我们制作了Cu/HAp/Ti或Cu/HAp/Pt结构。首先,使用KrF脉冲激光沉积(PLD)方法在Ti或Pt衬底上沉积1.5 m厚的HAp。HAp沉积后,在氮气气氛中后退火结晶,并在电炉中缓慢冷却。然后,在HAp薄膜上附着Cu顶部电极片。最后,将Cu/HAp/Ti或Cu/HAp/Pt结构的一端夹紧组成振动悬臂梁。当Cu/HAp/Ti或Cu/HAp/Pt束流被微型激振器以束流的第一固有频率激励时,通过运算放大电路测量HAp薄膜的输出电压响应来估计压电系数。结果表明,人工合成的HAp薄膜具有压电性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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