A Deterministic Multi-Subband Boltzmann Transport Equation Solver for GaN Based HEMTs

Suhyeong Cha, Sung-Min Hong
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引用次数: 1

Abstract

A high electron mobility transistor based on a GaN channel is simulated by using a deterministic Boltzmann transport equation solver. In order to verify the physical soundness of the scattering mechanisms, first, a mobility calculator has been implemented. Phonon-limited electron mobility is calculated for one-dimensional heterostructure in the low field regime. For GaN based HEMTs, the two-dimensional Poisson equation and the one-dimensional Schrodinger equation along the confinement direction are considered. The transport of electrons in the non-equilibrium state is determined by solving the Boltzmann equation expanded with the Fourier harmonics in a self-consistent manner. The polar optical phonon is considered to explain the scattering of the system and the Pauli principle is also included. The Boltzmann equation is implemented for the total energy space with H-transformation. Without assistance from the momentum-based equation, the direct bias ramping from the equilibrium solution can be performed.
GaN基hemt的确定性多子带玻尔兹曼输运方程求解器
利用确定性玻尔兹曼输运方程求解器模拟了基于氮化镓通道的高电子迁移率晶体管。为了验证散射机制的物理合理性,首先,实现了一个迁移率计算器。计算了低场条件下一维异质结构的声子限制电子迁移率。对于GaN基hemt,考虑了沿约束方向的二维泊松方程和一维薛定谔方程。电子在非平衡态的输运是通过求解以自洽方式展开的傅立叶谐波玻尔兹曼方程来确定的。考虑了极化光学声子来解释系统的散射,并引入了泡利原理。用h变换实现了总能量空间的玻尔兹曼方程。在没有动量方程的帮助下,平衡解的直接偏置斜坡可以进行。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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