Overview and Comparison of Methodologies for Extraction of the Specific current of a MOS Transistor

Abstract

This paper presents an overview and comparison of four methodologies used for empirical determination of the specific current Is of a MOS transistor. The goal of the paper is to evaluate the accuracy of these methodologies and determine whether the obtained results could be used for hand calculations in the early stage of the design of a CMOS circuit. For this purpose, the methodologies are applied for the extraction of the specific current of a NMOS transistor in a 45nm CMOS technology. The obtained results for Is are used to calculate the transfer characteristics of the transistor and are compared with the transfer characteristics obtained with SPICE simulation to verify the accuracy of the methodologies.