Microwave heating for advanced semiconductor processing

Abstract

The microwave power is successfully utilized to rapidly heat a variety of materials, including Si at 150 /spl deg/C/s to 1200 /spl deg/C and SiC at 400 /spl deg/C/s to 2000 /spl deg/C. In this paper with Si microwave RTP, we have demonstrated ultra shallow junctions that exceed lamp-based RTP capabilities and satisfy the 90 nm technology node. The comparative experiment has been conducted between microwave RTP and optical lamp RTP. Comparison sheet resistance-junction depth curve for microwave and lamp-based p-type annealing results and time-temperature profile for a high-power microwave spike annealing are studied by experiments.