The Influence of NAND Flash Self-Recovery Effect on Retention Error

Abstract

This paper verifies the self-recovery effect of NAND flash by experiments and proposes the concept of relaxation time (tr) based on self-recovery effect. Moreover, the change rule of data retention error under different degrees of self-recovery effect for blocks with different program/erase stresses is also studied. First of all, the growth trend of NAND flash storage data retention error is significantly reduced by increasing the tr value. Experiments show that when tr is 6h, the retention error is reduced by about 60% compared with the retention error under 0h's tr at the same retention days. In addition, as tr increases, the NAND flash self-recovery effect will reach saturation. The experimental results show that when tr is around 2h, increasing tr will not play a significant role in reducing retention error