Performance Analysis of N-CAM, P-CAM and TG-CAM Using 45-nm Technology

T. V. Mahendra, Sheikh Wasmir Hussain, Sandeep Mishra, A. Dandapat
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引用次数: 1

Abstract

Content addressable memory (CAM) is widely used in many applications, wherever we need fast memory access CAM provides a provision. CAM is faster due to the arrangement of core cells that allows parallel access, it searches total memory array in single clock cycle. CAM plays a crucial role in network applications because of its parallel access. In this paper, we explored and described about CAM architectures based on N-type, P-type and TG-type comparison circuitry. For faster memory search, we used a latch-type match-line (ML) sensing scheme. Search operations and results of the CAM designs have been verified using a 45-nm CMOS process at 27°C with 1 V supply in SPECTRE simulator. Based on the post-layout results of 32×32-bit arrays, the P-CAM provides the best performance comparatively.
基于45nm技术的N-CAM、P-CAM和TG-CAM性能分析
内容可寻址存储器(CAM)广泛应用于许多应用程序中,在需要快速存储器访问的任何地方,CAM都提供了一种解决方案。由于核心单元的排列允许并行访问,CAM速度更快,它在单个时钟周期内搜索整个存储器阵列。由于其并行访问的特性,CAM在网络应用中起着至关重要的作用。本文对基于n型、p型和tg型比较电路的CAM架构进行了探讨和描述。为了更快的内存搜索,我们使用了锁存式匹配线(ML)传感方案。在SPECTRE模拟器中,使用45纳米CMOS工艺在27°C和1 V电源下验证了CAM设计的搜索操作和结果。通过32×32-bit阵列的后置结果,P-CAM具有较好的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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