Dave Saunders, S. Bingham, G. Menon, D. Crockett, Josh Tor, R. mende, M. Behrens, N. Jain, A. Alexanian, Rajanish
{"title":"A single-chip 24 GHz SiGe BiCMOS transceiver for low cost FMCW airborne radars","authors":"Dave Saunders, S. Bingham, G. Menon, D. Crockett, Josh Tor, R. mende, M. Behrens, N. Jain, A. Alexanian, Rajanish","doi":"10.1109/NAECON.2009.5426619","DOIUrl":null,"url":null,"abstract":"The design and measured results of a highly integrated FMCW radar transceiver are presented. The transceiver includes a transmitter with +7dBm output power and −82 dBc/Hz phase noise at 100 kHz, dual I/Q receivers with 10dB NF and 18 dB gain, PLL, 15-bit DAC, instrumentation amplifiers, LDO regulators, and a serial programming interface - all designed to operate from −40 to +125°C at 3.5V, 275 mA. Fabricated using Jazz Semiconductor's 0.18 µm SiGe BiCMOS process and packaged in a 32-pin 5 mm × 5 mm QFN, this RFIC has the highest level of integration at 24 GHz known to the authors.","PeriodicalId":305765,"journal":{"name":"Proceedings of the IEEE 2009 National Aerospace & Electronics Conference (NAECON)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2009 National Aerospace & Electronics Conference (NAECON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NAECON.2009.5426619","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
The design and measured results of a highly integrated FMCW radar transceiver are presented. The transceiver includes a transmitter with +7dBm output power and −82 dBc/Hz phase noise at 100 kHz, dual I/Q receivers with 10dB NF and 18 dB gain, PLL, 15-bit DAC, instrumentation amplifiers, LDO regulators, and a serial programming interface - all designed to operate from −40 to +125°C at 3.5V, 275 mA. Fabricated using Jazz Semiconductor's 0.18 µm SiGe BiCMOS process and packaged in a 32-pin 5 mm × 5 mm QFN, this RFIC has the highest level of integration at 24 GHz known to the authors.