Epitaxial growth and magnetic response of La0.8Ca0.2MnO3 thin films grown on ultrathin SrTiO3 buffered GaAs substrates

Z. Wu, L. Wang, J. Gao
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Abstract

Colossal-magnetoresistance manganites La0.8Ca0.2MnO3 (LCMO) films were epitaxially grown on (001) GaAs substrates by pulsed-laser deposition. An ultrathin SrTiO3 (STO) film (∼10 nm) was used as a buffer layer to reduce the lattice mismatch and interdiffusion. The crystallinity and the growth mode were investigated using X-ray diffraction and reflective high-energy electron diffraction. The results indicate that LCMO is grown with a highly c-axis epitaxial feature depending on the STO buffer layer. The heterostructures exhibit good rectifying behavior in a wide temperature range from 50 K to 300 K with a paramagnetic-ferromagnetic transition at ∼200 K. Both the LCMO thin films and the LCMO/STO/GaAs heterojunctions showed magnetic response under the magnetic fields.
超薄SrTiO3缓冲GaAs衬底上La0.8Ca0.2MnO3薄膜的外延生长和磁响应
采用脉冲激光沉积的方法在(001)GaAs衬底上外延生长了巨型磁阻锰酸盐La0.8Ca0.2MnO3 (LCMO)薄膜。超薄SrTiO3 (STO)薄膜(~ 10 nm)用作缓冲层,以减少晶格失配和相互扩散。利用x射线衍射和反射高能电子衍射对晶体结晶度和生长方式进行了研究。结果表明,LCMO的生长具有高度c轴外延特征,这取决于STO缓冲层。异质结构在50 K到300 K的宽温度范围内表现出良好的整流行为,在~ 200 K时出现顺磁-铁磁转变。LCMO薄膜和LCMO/STO/GaAs异质结在磁场作用下均表现出磁响应。
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