{"title":"Epitaxial growth and magnetic response of La0.8Ca0.2MnO3 thin films grown on ultrathin SrTiO3 buffered GaAs substrates","authors":"Z. Wu, L. Wang, J. Gao","doi":"10.1209/0295-5075/98/37001","DOIUrl":null,"url":null,"abstract":"Colossal-magnetoresistance manganites La0.8Ca0.2MnO3 (LCMO) films were epitaxially grown on (001) GaAs substrates by pulsed-laser deposition. An ultrathin SrTiO3 (STO) film (∼10 nm) was used as a buffer layer to reduce the lattice mismatch and interdiffusion. The crystallinity and the growth mode were investigated using X-ray diffraction and reflective high-energy electron diffraction. The results indicate that LCMO is grown with a highly c-axis epitaxial feature depending on the STO buffer layer. The heterostructures exhibit good rectifying behavior in a wide temperature range from 50 K to 300 K with a paramagnetic-ferromagnetic transition at ∼200 K. Both the LCMO thin films and the LCMO/STO/GaAs heterojunctions showed magnetic response under the magnetic fields.","PeriodicalId":171520,"journal":{"name":"EPL (Europhysics Letters)","volume":"153 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"EPL (Europhysics Letters)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1209/0295-5075/98/37001","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Colossal-magnetoresistance manganites La0.8Ca0.2MnO3 (LCMO) films were epitaxially grown on (001) GaAs substrates by pulsed-laser deposition. An ultrathin SrTiO3 (STO) film (∼10 nm) was used as a buffer layer to reduce the lattice mismatch and interdiffusion. The crystallinity and the growth mode were investigated using X-ray diffraction and reflective high-energy electron diffraction. The results indicate that LCMO is grown with a highly c-axis epitaxial feature depending on the STO buffer layer. The heterostructures exhibit good rectifying behavior in a wide temperature range from 50 K to 300 K with a paramagnetic-ferromagnetic transition at ∼200 K. Both the LCMO thin films and the LCMO/STO/GaAs heterojunctions showed magnetic response under the magnetic fields.