Low temperature deposition and optical properties of RE doped nanocrystalline SiC films

Abstract

Nanocrystalline silicon carbide thin films were prepared by a modified vacuum arc method of deposition using a silicon carbide cathode. For modification of optical properties some films were doped by RE metals from special evaporator during deposition. Thin SiC films deposited at room temperature were amorphous and had substantial stress. The phase transition from amorphous silicon carbide to nanocrystalline silicon carbide occurred at deposition temperature 450-500/spl deg/C. The properties and structure of nanocrystalline SiC films mainly depended on the substrate temperature and energy of deposited ions.