Abdul Ali, J. Yun, H. Ng, D. Kissinger, F. Giannini, P. Colantonio
{"title":"Sub-THz On-Chip Dielectric Resonator Antenna with Wideband performance","authors":"Abdul Ali, J. Yun, H. Ng, D. Kissinger, F. Giannini, P. Colantonio","doi":"10.23919/EuMIC.2019.8909651","DOIUrl":null,"url":null,"abstract":"This paper presents the design of a wideband on-chip dielectric resonator antenna (DRA) operating at sub-THz frequencies. The DRA consists of inverted E-shaped on-chip driver, a low-permittivity supporter, and a dielectric resonator (DR). Substrate integrated waveguide (SIW) cavity backed on-chip antenna with L-probe feeding mechanism is adopted for the driver at 350 GHz. A standard 130-nm SiGe BiCMOS back-end process is employed in its design. The input matching, gain, and radiation efficiency of the on-chip driver are enhanced by placing a supporter and a DR on top of it. From full-EM simulations, the DRA achieves the -10 dB impedance bandwidth of 65 GHz (18.5%) with peak gain of about 10 dBi and radiation efficiency of 75% at 350 GHz. The developed antenna is highly suitable for future broadband front-end systems operating above 300 GHz.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EuMIC.2019.8909651","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
Abstract
This paper presents the design of a wideband on-chip dielectric resonator antenna (DRA) operating at sub-THz frequencies. The DRA consists of inverted E-shaped on-chip driver, a low-permittivity supporter, and a dielectric resonator (DR). Substrate integrated waveguide (SIW) cavity backed on-chip antenna with L-probe feeding mechanism is adopted for the driver at 350 GHz. A standard 130-nm SiGe BiCMOS back-end process is employed in its design. The input matching, gain, and radiation efficiency of the on-chip driver are enhanced by placing a supporter and a DR on top of it. From full-EM simulations, the DRA achieves the -10 dB impedance bandwidth of 65 GHz (18.5%) with peak gain of about 10 dBi and radiation efficiency of 75% at 350 GHz. The developed antenna is highly suitable for future broadband front-end systems operating above 300 GHz.