Design of over Temperature Protection Circuit Based on Hysteresis Comparison with High Precision

2023 IEEE 3rd International Conference on Computer Communication and Artificial Intelligence (CCAI) Pub Date : 2023-05-26 DOI:10.1109/CCAI57533.2023.10201314

Rui Jiang, Yahong Ma, Xiaojiao Fan, Rongrong Wang, Zhentao Huang, Weisu Li, Liu Yang, Yongsheng Dai

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Abstract

In this paper, a high-precision over-temperature protection (OTP) circuit based on 55nm CMOS technology is proposed. By introducing external feedback, enable level with logic signal is generated to realize hysteresis of temperature signal. The bandgap reference circuit can work normally under a wide range of power supply voltage and temperature to ensure the stable working state and output of the over temperature protection circuit. The simulation results show that when the temperature exceeds 115°C, the chip stops working, and when the temperature drops to 88°C, the chip works normally, with a hysteresis interval of 27°C. Under different process angle conditions, the temperature coefficient can be kept in a small range, and the output conversion rate of the circuit is 24.99V/°C, which has the characteristics of high precision and high sensitivity. The circuit can suppress the drift of the threshold point caused by the process change, has high precision, and ensures the stability of the circuit performance.

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基于磁滞比较的高精度过温保护电路设计

本文提出了一种基于55nm CMOS技术的高精度超温保护电路。通过引入外部反馈，产生带逻辑信号的使能电平，实现温度信号的滞后。带隙参考电路可以在很宽的电源电压和温度范围内正常工作，保证过温保护电路的稳定工作状态和输出。仿真结果表明，当温度超过115℃时，芯片停止工作，当温度降至88℃时，芯片正常工作，迟滞间隔为27℃。在不同工艺角度条件下，温度系数可保持在很小的范围内，电路输出转换率为24.99V/°C，具有高精度、高灵敏度的特点。该电路能抑制工艺变化引起的阈值点漂移，精度高，保证了电路性能的稳定性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2023 IEEE 3rd International Conference on Computer Communication and Artificial Intelligence (CCAI)

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