{"title":"The influence of non-stoichiometry on dopant electrical activation and depth distribution in InP implanted with Group IV or VI elements","authors":"C. Johnson, P. Kringhøj, M. Ridgway","doi":"10.1016/B978-0-444-82334-2.50176-3","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":251043,"journal":{"name":"Ion Beam Modification of Materials","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ion Beam Modification of Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1016/B978-0-444-82334-2.50176-3","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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