Spectroscopic CD technology for gate process control

2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203) Pub Date : 2001-10-08 DOI:10.1109/ISSM.2001.962934

A. Levy, S. Lakkapragada, W. Mieher, K. Bhatia, U. Whitney, M. Hankinson

引用次数: 8

Abstract

Spectroscopic CD (SCD) technology provides high precision shape information with excellent correlation to established critical dimension metrology. Poly-gate wafers from over 20 lots produced in a high-volume manufacturing fab were measured and analyzed with KLA-Tencor's SCD and SEM CD tools. APC simulations on the SCD data demonstrate the potential to reduce the CD deviation from the process target. Focus-exposure process window analysis using additional shape information available with SCD shows the potential value of the more complete view for lithographic cluster tool monitoring.

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用于闸门过程控制的光谱CD技术

光谱CD (SCD)技术提供高精度的形状信息，与已建立的临界尺寸计量具有良好的相关性。使用KLA-Tencor的SCD和SEM CD工具测量和分析了在大批量制造工厂生产的20多个批次的多极晶圆。在SCD数据上的APC模拟证明了减少CD与工艺目标偏差的潜力。利用SCD提供的附加形状信息进行聚焦曝光过程窗口分析，显示了光刻聚束工具监控更完整视图的潜在价值。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)

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