Electrical measurement of modified sol-gel derived lead titanate thin films capacitor

Z. Nurbaya, Z. Habibah, M. Rusop
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引用次数: 2

Abstract

The thin films of lead titanate (PbTiO3) have been prepared on ITO coated glass substrate by means of storage element for DC power application. The solution was prepared by modified sol-gel process that involved sonication process to ensure the uniform nanoparticulates formation before ageing stage take parts. In the need to compensate the lead loss, extra 10mol% of Pb content was added to the solution. The thin films were deposited at high spin speed around 3500 rpm at 30 seconds with multiple coating processes. Microstructural observation was done through scanning electron microscopy that shows the existence of zero layers between PbTiO3 and ITO electrode and the film thickness was about ~420nm. Besides that, electrical properties of PbTiO3 thin films were measured by using impedance spectroscope analyzer and 2-points probe solar simulator for dielectric and i-v characteristic respectively. It was found that the dielectric constant value achieved 153 at 1000 Hz plus with approachable of 0.723 energy loss. It is certainly noticed that the thin films was in ohmic behavior where the current density was about 10-9A/cm2.
改性溶胶-凝胶衍生钛酸铅薄膜电容器的电测量
采用存储元件在ITO镀膜玻璃基板上制备了钛酸铅(PbTiO3)薄膜,用于直流电源。采用改进的溶胶-凝胶法制备该溶液,其中包括超声处理,以确保在老化阶段开始前纳米颗粒形成均匀。为了补偿铅的损失,在溶液中额外加入10mol%的铅。薄膜在3500转/分左右的高速旋转下,在30秒内通过多种涂层工艺沉积。通过扫描电镜观察,发现PbTiO3与ITO电极之间存在零层,膜厚约为~420nm。此外,利用阻抗谱分析仪和两点探针太阳模拟器分别测量了PbTiO3薄膜的介电特性和i-v特性。结果表明,在1000 Hz +下,介质常数值达到153,能量损失接近0.723。当电流密度约为10-9A/cm2时,薄膜呈现欧姆行为。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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