Design of an integrated high-speed HBT-based electroabsorption modulator and driver in SiGe BiCMOS technology

Abstract

Monolithic optoelectronic integrated circuits are a primary focus of research for high-speed optical communication system development. Standard silicon processes provide a cost effective way for electro-optic system integration. This paper presents a monolithic optical modulator and driver design based on 130nm SiGe BiCMOS technology. Post-layout simulation results demonstrate that the modulator achieves a switch frequency of 10GHz.