Specificities of linear Si QD arrays integration and characterization

H. Niebojewski, B. Bertrand, E. Nowak, T. Bedecarrats, B. C. Paz, L. Contamin, P. Mortemousque, V. Labracherie, L. Brevard, H. Sahin, J. Charbonnier, C. Thomas, M. Assous, M. Cassé, M. Urdampilleta, Y. Niquet, F. Perruchot, F. Gaillard, S. D. Franceschi, T. Meunier, M. Vinet
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引用次数: 3

Abstract

The low temperature operation of quantum computing devices implies developing characterization protocols, from extensive statistical tests to targeted device screening at cryogenic temperature. This paper reviews major integration constraints arising in linear Si quantum dots arrays and their implication on both the device operation and electrical characterization.
线性硅量子点阵列的特性集成与表征
量子计算设备的低温运行意味着开发表征协议,从广泛的统计测试到低温下的目标设备筛选。本文综述了线性硅量子点阵列中出现的主要集成约束及其对器件操作和电学特性的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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