Back diffusion of electrons in N2 subjected to crossed fields

M. Dincer, H. Hiziroglu
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引用次数: 0

Abstract

In the E/N range of 50 Td - 700 Td (1 Td = 10-21 Vm2), the back diffusion process for nitrogen subjected to crossed fields are investigated at B/N values ranging from 0 to 24.24 × 10-25 Tm3 by means of a Monte Carlo technique employing realistic collision cross sections. It is observed that at constant electron emission energy of 1.0 eV, for a given E/N the escape factor decreases as B/N increases. It is also observed that in the lower E/N range in crossed fields the escape factor is smaller than those of the higher E/N range. The escape factor on the magnetic deflection angle is evaluated and a dependence on the magnetic field is observed in crossed fields in the given ranges of E/N and B/N.
交叉场作用下N2中电子的反向扩散
在E/N为50 Td - 700 Td (1 Td = 10-21 Vm2)范围内,利用蒙特卡罗方法研究了在B/N为0 ~ 24.24 × 10-25 Tm3范围内交叉场作用下氮的反向扩散过程。当电子发射能量为1.0 eV时,对于给定的E/N,逃逸因子随B/N的增大而减小。交叉田低E/N范围内的逃逸因子小于高E/N范围内的逃逸因子。在给定的E/N和B/N范围内,观察到交叉场与磁场的依赖关系,并评估了逃逸因子对磁偏转角的影响。
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