Delay and short-circuit power expressions characterizing a CMOS inverter driving resistive interconnect

Abstract

In this paper, analytical expressions characterizing the output voltage, propagation delay and short-circuit energy dissipation of a CMOS inverter driving resistive interconnects are presented. The α-power law MOSFET model is used. A detailed analysis of the inverter operation is provided, which results in accurate expressions of the output response to an input ramp. The propagation delay is analytically calculated taking into account the coupling capacitance between input and output and the effect of the short-circuit current. In addition, the short-circuit energy dissipation is accurately estimated. Experimental results showed that our analytical expressions for propagation delay and short-circuit energy are in very good agreement with SPICE simulations.