A Carrier Lifetime Sensitivity Probe Based on Transient Capacitance: A novel method to Characterize Lifetime in Z2FET

Abstract

The Z2FET [1] (Fig.1) has a potential for application in memory cells without connection to external charge storage components. Since its invention and experimental demonstrations, essential progress has been made in analyzing its transient and DC properties via electrical characterization [2] and TCAD simulations [3, 4, 6]. However, until now no attempt has been made to investigate the transient capacitance (C-t), which, can be used to characterize the carrier lifetime ruling the dynamic operation of the Z2FET. The carrier lifetime is one of the most important parameters, which directly determines the Z2FET retention time (Fig. 2). In this work, using simulation, we analyze the impact of carrier lifetime on transient capacitance in the gated region of the Z2FET (Fig. 1) in order to provide guidelines of its experimental measurement and characterization.