Universal Terahertz Integrated Systems: Bridging the ‘THz’ and ‘Application’ Gap in the Next Decade

K. Sengupta
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引用次数: 2

Abstract

The spectrum beyond 100 GHz has undergone transformative changes in the past decade, both in the form of technological progress and simultaneously in application development. With the evolution of 5G in the sister millimeter-wave band, the field of integrated THz technology has progressed significantly towards enabling efficient and compact Terahertz systems operable at room temperature and deployable at large scales. This has been facilitated by key developments in a multitude of integrated technology substrates in electronics, photonics and also hybrid systems. While fmax of III-V based devices have crossed 1.5 THz, silicon-based THz systems have shown remarkable advancements in complex systems including chip-scale phased arrays, active and passive imagers, and wireless communication systems. While this technological progress has led to steady closing of the ‘THz gap’ in the past ten years, there needs to be concerted effort in closing the ‘THz’ and ‘application’ gap in the next ten years to allow large scale deployment of THz technology. In this paper, we summarize the advancements in integrated THz systems in the past decade, discuss future challenges and directions to progress towards that goal.
通用太赫兹集成系统:弥合“太赫兹”和“应用”在未来十年的差距
在过去的十年中,100 GHz以上的频谱在技术进步和应用开发方面都发生了革命性的变化。随着5G在姐妹毫米波频段的发展,集成太赫兹技术领域已经取得了重大进展,使高效、紧凑的太赫兹系统能够在室温下运行,并可大规模部署。电子、光子学和混合系统中大量集成技术基板的关键发展促进了这一点。虽然基于III-V的器件的fmax已经超过1.5太赫兹,但基于硅的太赫兹系统在复杂系统中显示出显着的进步,包括芯片级相控阵,有源和无源成像仪以及无线通信系统。虽然这一技术进步在过去十年中导致了“太赫兹差距”的稳步缩小,但在未来十年中,需要共同努力缩小“太赫兹”和“应用”差距,以允许大规模部署太赫兹技术。在本文中,我们总结了过去十年中集成太赫兹系统的进展,讨论了未来的挑战和实现这一目标的方向。
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