Fully Integrated CMOS Wideband Power Amplifier for Fifth Generation Mobile Communications

Abstract

This paper describes a power amplifier(PA) that performs frequency range 2(FR2) for fifth generation mobile networks (5G) using 65nm bulk CMOS devices. The power amplifier with two-stage cascode architecture achieved a small signal gain of 29.2 dB, the output 1-dB compression power (OP1dB) of 20.35 dBm, and the power added efficiency at peak power of 27.1% at 28 GHz under 2.2-V supply voltage. At 29GHz the small signal gain is 28.8 dB, the OP1dB is 20.29 dBm, and the power-added efficiency at peak power is 26.9% under 2.2-V supply voltage.