Physico-chemical characterization of Ta2O5 thin films/electrolyte junctions

Viviana Figa
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Abstract

An analysis of the electronic properties of Ta2O5/electrolyte junction is reported for thin film( les 14 nm) grown on tantalum in acidic electrolyte. The investigation is carried out by the synergetic use of three techniques: Photocurrent Spectroscopy (PCS), Electrochemical Impedance Spectroscopy (EIS) and Differential Admittance (DA) measurements. PCS is a non destructive optical technique based on the analysis of the electrochemical response (photocurrent or photopotential) of the electrode/electrolyte interface under irradiation with photons of suitable energy. PCS can provide information on the energetic of metal/oxide/electrolyte interfaces (flat band potential determination, conduction and valence band edges location). EIS allows to model the electrochemical behaviour of the oxide/electrolyte interface and AD measurements allow to get information on the tantalum grown in the investigated conditions.
Ta2O5薄膜/电解质结的物理化学表征
本文报道了在酸性电解液中生长钽薄膜(厚度小于14nm)的Ta2O5/电解质结的电子特性。利用光电流光谱(PCS)、电化学阻抗光谱(EIS)和差分导纳(DA)测量三种技术协同进行了研究。PCS是一种基于分析电极/电解质界面在适当能量光子照射下的电化学响应(光电流或光势)的非破坏性光学技术。PCS可以提供金属/氧化物/电解质界面的能量信息(平带电位测定、导通和价带边缘位置)。EIS可以模拟氧化物/电解质界面的电化学行为,AD测量可以获得在研究条件下生长的钽的信息。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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