Prediction and Control of NBTI -- Induced SRAM Vccmin Drift

Abstract

The paper presents a comprehensive study of the impact of NBTI on SRAM Vccmin stability. The authors describe a novel simulation technique to predict the between - die statistical distribution of Vccmin drift due to NBTI. While the drift is a fundamental phenomenon, it was shown that by cell design and transistor process optimization, the drift can be reduced to tolerable levels