Atomic force microscopy analysis of orientation effect on InP-based heterojunction bipolar transistors

Abstract

The influence of the mesa surface, imaged by atomic force microscopy (AFM), on the current gain of InP/InGaAs heterojunction bipolar transistor for three emitter crystallographic orientations was reported. The three-dimensional surface topography of the samples was characterized with an AFM. The current gain versus collector current for three emitters were obtained.