Atomic Layer Deposition of Hafnium Oxide on Silicon and Polymer Fibers at Temperatures below 100o C

Abstract

Atomic layer deposition of hafnium oxide from tetrakis (diethylamino) hafnium (TDEAH) and water vapor was employed to create thin films on silicon with reactor temperatures as low as 30 o  C. Spectral ellipsometry and X-ray photoelectron spectroscopy were used to probe the thickness and composition of these films. Deposition at the same temperature of 30 o  C was carried out on poly-caprolactone (PCL) nanofibers as a template to examine the possibility of fabricating hafnium oxide nanotubes. Energy dispersive X-ray scans and scanning electron microscope images revealed significant hafnia coverage on the fibers, suggesting that hafnium oxide nanotubes can be formed by means of polymer vaporization after deposition.