Conducted Noise Investigation for IMS Based GaN HEMT Power Module by Black Box Model

Amina Gahfif, F. Costa, Pierre-Étienne Levy, M. Berkani, B. Revol, Marwan Ali
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引用次数: 2

Abstract

Boost converters based on GaN components are known to generate high levels of electromagnetic interferences (EMI) in common mode (CM) and / or in differential mode (DM). In this article, it is shown how a part of the CM current comes from the DM source and how to significantly reduce this effect. Solution is based on "balancing" the propagation paths between the positive line and the return line with taking care of a well-balanced inductances and parasitic capacitances distribution. By reducing significantly, CM current total electromagnetic interferences also reduce and thus facilitates compliance with electromagnetic compatibility (EMC) standards. This approach is a good prerequisite for an optimal designing of the filter afterward.
采用黑盒模型对基于IMS的GaN HEMT功率模块进行噪声研究
已知基于GaN组件的升压转换器在共模(CM)和/或差分模式(DM)下会产生高水平的电磁干扰(EMI)。在本文中,展示了CM电流的一部分是如何来自DM源的,以及如何显著降低这种影响。解决方案是基于“平衡”正极线和回线之间的传播路径,同时照顾到良好平衡的电感和寄生电容分布。通过显著降低CM电流,总电磁干扰也减少,从而有利于符合电磁兼容性(EMC)标准。该方法为后续滤波器的优化设计提供了良好的前提条件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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