Balanced Noise Design of Dual-Band 2.4/5-GHz pHEMT LNAs

Abstract

This paper presents dual-band 2.4/5-GHz dual-band pHEMT LNAs based on a balanced noise design approach using 0.15 μm pHEMT technology. A dual-band LNA has two input match frequencies without simultaneous noise match at these two frequencies especially when the extrinsic loss caused by the inductor is absent. Noise parameters as a function of frequencies for a dual-band FET LNA based on the balanced noise performance are developed. The fully integrated pHEMT LNA achieves power gain of 18 dB at 2.4 GHz and 12 dB at 5 GHz and noise figure about 3dB at 2.4 GHz and 5 GHz, respectively, at 12.6 mA and 3 V. The pHEMT LNA with a bondwire inductor at input match demonstrates a distinct balanced noise performance.