Record power-added efficiency using GaAs on insulator MESFET technology

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI:10.1109/GAAS.1998.722695

T. Jenkins, L. Kehias, P. Parikh, J. Ibbetson, U. Mishra, D. Docter, Minh Le, K. Kiziloglu, D. Grider, J. Pusl

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Abstract

Record power-added efficiency (PAE) of 89% was obtained at 8 GHz with a gain of 9.6 dB using GaAs on insulator (GOI) MESFETs, which were operated using a 3 V supply. When the voltage was increased to 4 V, the peak PAE was 93% at 210 mW/mm with 9.2 dB gain. The ideal current-voltage characteristics with practically zero leakage current and large transconductance near pinch-off yielded PAE values approaching the theoretical limits of over-driven operation.

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在绝缘体MESFET技术上使用GaAs记录功率增加效率

在使用3v电源工作的绝缘体(GOI) mesfet上使用GaAs，在8 GHz频率下获得了89%的创纪录功率附加效率(PAE)，增益为9.6 dB。当电压增加到4 V时，峰值PAE为93%，增益为9.2 dB，功率为210 mW/mm。理想的电流-电压特性，即几乎为零的漏电流和在掐断附近的大跨导，产生的PAE值接近过驱动运行的理论极限。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)

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