Using X-ray radiation to erase information from a CMOS programmable read-only memory

12th International Conference on High-Power Particle Beams. BEAMS'98. Proceedings (Cat. No.98EX103) Pub Date : 1998-06-07 DOI:10.1109/BEAMS.1998.817033

Y. Kotov, S. Sokovnin, V.A. Skotnikov

{"title":"Using X-ray radiation to erase information from a CMOS programmable read-only memory","authors":"Y. Kotov, S. Sokovnin, V.A. Skotnikov","doi":"10.1109/BEAMS.1998.817033","DOIUrl":null,"url":null,"abstract":"We have investigated the possibility of the use of X-rays to erase CMOS programmable digital ICs. In the experiment, microcontroller IC Z86 (Zilog) and 87C196KR (Intel) chips, were used. The repetitive pulsed electron accelerator URT-0.5 was used as an X-ray generator. It produced 7.6 Gy per minute (50 pps) at 5 cm from the anode on the axis, where the chips were placed. The maximum dose rate was 6.36 kGy/sec. The absorbed dose was measured using LiF-detectors. Tested chips with special program in their memory were irradiated until the information had been erased. A periodic control of the chip memory during the irradiation was performed. It has been found experimentally that CMOS PROM become free after irradiation with a dose of about 380 Gy, if it was wrapped up with 10-/spl mu/m thick Al foil. The foil only connected chip pins. It is possible to make this erasure procedure with the same chip more than twice. Irradiation erased chips were successfully tested in the working device.","PeriodicalId":410823,"journal":{"name":"12th International Conference on High-Power Particle Beams. BEAMS'98. Proceedings (Cat. No.98EX103)","volume":"426 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Conference on High-Power Particle Beams. BEAMS'98. Proceedings (Cat. No.98EX103)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BEAMS.1998.817033","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

Abstract

We have investigated the possibility of the use of X-rays to erase CMOS programmable digital ICs. In the experiment, microcontroller IC Z86 (Zilog) and 87C196KR (Intel) chips, were used. The repetitive pulsed electron accelerator URT-0.5 was used as an X-ray generator. It produced 7.6 Gy per minute (50 pps) at 5 cm from the anode on the axis, where the chips were placed. The maximum dose rate was 6.36 kGy/sec. The absorbed dose was measured using LiF-detectors. Tested chips with special program in their memory were irradiated until the information had been erased. A periodic control of the chip memory during the irradiation was performed. It has been found experimentally that CMOS PROM become free after irradiation with a dose of about 380 Gy, if it was wrapped up with 10-/spl mu/m thick Al foil. The foil only connected chip pins. It is possible to make this erasure procedure with the same chip more than twice. Irradiation erased chips were successfully tested in the working device.

查看原文本刊更多论文

利用x射线辐射擦除CMOS可编程只读存储器中的信息

我们研究了使用x射线擦除CMOS可编程数字集成电路的可能性。在实验中，使用了单片机IC Z86 (Zilog)和87C196KR (Intel)芯片。使用重复脉冲电子加速器URT-0.5作为x射线发生器。它产生7.6 Gy / min (50 pps)，距离轴上放置芯片的阳极5厘米处。最大剂量率为6.36 kGy/sec。吸收剂量的测量是用liff检测器。在存储器中装有特殊程序的测试芯片被照射，直到信息被擦除。在辐照期间对芯片存储器进行周期性控制。实验发现，在约380 Gy的辐照剂量下，用10-/spl μ m厚的Al箔包裹CMOS PROM，使其游离。箔片只连接芯片引脚。有可能对同一芯片进行两次以上的擦除过程。辐照擦除芯片在工作装置中测试成功。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

12th International Conference on High-Power Particle Beams. BEAMS'98. Proceedings (Cat. No.98EX103)

自引率

0.00%

发文量