Design and Analysis of A Dual-Band Bistatic Backscatter Circuit for Passive RFID Tags

N. A. Quadir, M. Hamdi, M. A. Awan, Bo Wang, A. Bermak
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Abstract

Passive radio-frequency identification (RFID) tags, when placed remotely or in harsh environments, will benefit the most if the communication distance between the tag and reader is vastly improved. The bistatic backscattering technique provides a solution to this problem by separating the carrier and backscattered signal in frequency, which helps mitigate interference. It also decouples the reader from carrier generation by having a separate radio-frequency (RF) emitter and further improves the signal strength by reducing round trip path loss. A dual-band on-chip bistatic backscattering circuit design for passive RFID tags is presented in this paper using a 180 nm CMOS process dissipating 35 $\mu \mathrm{W}$ of power. Post layout simulation results provide a communicable distance of 170 m between the tag and reader at 868 MHz and 60 m at 2.4 GHz when the tag is kept 5 m away from the RF emitter.
无源RFID标签双频双稳态后向散射电路的设计与分析
无源射频识别(RFID)标签,当放置在远程或恶劣的环境中,如果标签和阅读器之间的通信距离大大提高,将受益最大。双基地后向散射技术通过在频率上分离载波和后向散射信号来解决这一问题,有助于减轻干扰。它还通过具有单独的射频(RF)发射器将读取器与载波产生分离,并通过减少往返路径损耗进一步提高信号强度。本文提出了一种用于无源RFID标签的双频片上双稳态后向散射电路设计,该电路采用180nm CMOS工艺,功耗为35 $\mu \mathrm{W}$。后布局仿真结果表明,当标签与射频发射器保持5 m距离时,标签与读写器在868 MHz时的通信距离为170 m,在2.4 GHz时为60 m。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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