Important Considerations Relating To GaAs Fet Power Amplifiers Intended For Use In Radar Systems

Abstract

This paper will review the relative merits of class A and class B bias for GaAs FET power amplifiers intended for use in radar systems. Aspects to be considered are power and efficiency in the gain compression/saturation region as a function of bias point, gain degradation in class B compared with class A, and range sidelobes resulting from pulsed operation and its implications for the pulse compression system.