Effects Of Bulk And MOCVD Thin Film Cover On The Characteristics Of Microstrip Resonators

K. Joshi, R. Pollard, V. Postoyalko
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Abstract

Shift in the resonance frequency and an increase in the Q factor of microstrip resonators in the presence of dielectric cover are observed in the frequency range of 2- 26GHz. Various microwave materials are used as a dielectric cover which include bulk alumina, semi-insulating GaAs, RT-Duroid and MOCVD A1203 thin film. Increase in the Q factor is found to vary between 103% to 769% depending upon the cover permittivity and thickness. A process has been proposed to fabricate mu1 tilayer homogeineous microstrip using thin film alumina as a cover material giving rise to increase in the quality factor by 137% to 259 % .
体积和MOCVD薄膜覆盖对微带谐振器特性的影响
在2 ~ 26GHz频率范围内,有介质覆盖时微带谐振腔的谐振频率发生位移,Q因子增加。使用多种微波材料作为介质覆盖层,包括大块氧化铝、半绝缘GaAs、RT-Duroid和MOCVD A1203薄膜。根据覆盖层介电常数和厚度的不同,Q因子的增加在103%到769%之间变化。提出了一种以氧化铝薄膜为覆盖材料制备多层均匀微带的方法,其质量因数提高了137% ~ 259%。
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