Study on the dielectric properties of Ag doped ZnO by “Universal Power Law”

G. Yin, J.Y. Li, S.T. Li, Pengyu Cheng
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引用次数: 0

Abstract

It was found that the dependence of the breakdown field E1mA and the activation energy, on Ag content are similar to that of the exponent of alphalf in low frequency region and alphahf in high frequency region on Ag content, which is a novel result in the research of varistor materials. By means of normalization of conductivity, it was found that samples with different Ag contents show similar mechanism of dielectric loss, which is suggested as the relaxation process of electron in deep level traps. The relation of ac conductivity of samples and scaling frequency shows a deviation from the master curve at high frequencies, which is due to different distribution of local energy barriers and the dynamics of mobile carriers. The results can be fully understood by means of ldquoUniversal Power Law(UPL)rdquo.
用“普适幂律”研究Ag掺杂ZnO的介电性能
发现击穿场E1mA和活化能对Ag含量的依赖关系与低频区α和高频区α hf指数对Ag含量的依赖关系相似,这是压敏电阻材料研究中的一个新结果。通过电导率归一化分析,发现不同Ag含量的样品表现出相似的介电损耗机制,认为这是电子在深能级阱中的弛豫过程。样品的交流电导率与标度频率的关系在高频处偏离主曲线,这是由于局域能垒分布和移动载流子动力学的不同所致。用普遍幂律(UPL)理论可以完全理解这些结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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