NUMERIC MODELING OF A DEPOSITION OF HAFNIUM OXIDE LAYERS USING RP-ALD METHOD

S. Zyuzin, A. Rezvanov, Yason G. Zasseev, V. Gvozdev, E. Ganykina, E. Gornev
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Abstract

In this work, model of remote plasma atomic layer deposition (RP-ALD) of hafnium oxide layers was considered. This model is based on Monte-Carlo method and takes into account the chemical kinetics of a process
利用rp-ald方法对氧化铪层沉积过程进行数值模拟
本文考虑了氧化铪层的远程等离子体原子层沉积(RP-ALD)模型。该模型基于蒙特卡罗方法,考虑了过程的化学动力学
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