Performance comparison of static CMOS and MCML gates in sub-threshold region of operation for 32nm CMOS technology

T. Agarwal, A. Sawhney, A. K. Kureshi, M. Hasan
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引用次数: 15

Abstract

This paper investigates the performance of static CMOS logic circuits and MOS current mode logic (MCML) circuits in sub-threshold region. The simulations are based on 32 nm Berkeley predictive technology model (BPTM) running in HSPICE software. It is found that MCML logic circuits exhibit a decrease in delay and so decrease in overall PDP, which is one of our performance measures, with scaling of input voltage which is contrary to the behavior of static CMOS logic circuits. The results show a propagation delay improvement of more than 10 times when using MCML logic over CMOS logic in sub-threshold region of operation. Further the performance in terms of PDP of MCML logic circuits is improved by a factor of 7-10 when the input voltage is scaled down from 0.4 V to 0.2 V. .The results of various circuit simulations have been illustrated and compared by defining certain performance measures and the trade off between these performance measures.
静态CMOS与MCML门在32nm CMOS亚阈值区域的性能比较
本文研究了静态CMOS逻辑电路和MOS电流模逻辑电路在亚阈值区域的性能。仿真基于在HSPICE软件中运行的32nm Berkeley预测技术模型(BPTM)。发现MCML逻辑电路表现出延迟减少,因此整体PDP降低,这是我们的性能指标之一,与静态CMOS逻辑电路的行为相反,输入电压的缩放。结果表明,在亚阈值区域,使用MCML逻辑比CMOS逻辑的传输延迟提高了10倍以上。此外,当输入电压从0.4 V降至0.2 V时,MCML逻辑电路的PDP性能提高了7-10倍。通过定义某些性能指标以及这些性能指标之间的权衡,说明并比较了各种电路模拟的结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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