Modeling Stresses of Contacts in Wiresaw Slicing of Polycrystalline and Crystalline Ingots: Application to Silicon Wafer Production

Ji Li, I. Kao, Vish Prasad
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引用次数: 2

Abstract

Wiresaw is a cost-effective technology with high surface quality for slicing large diameter silicon wafers. Though wiresaws have been deployed to cut polycrystalline and single crystal silicon ingot since early 1990s, very little is known about the fundamental cutting process. We investigate this manufacturing process and propose a contact stress model of wiresaw slicing which illustrates the interactions among the wire, ingot, and abrasives (e.g., SiC) carried by the slurry. Stresses created by wiresaw slicing silicon wafers are analyzed in this paper. During the cutting process, the wire moves at high speed (5–15 m/s) with respect to the silicon ingot. The abrasives in the slurry are lose third-body particles caught between the wire and ingot at the contact surface. The forces applied by the wire carry the abrasive particles and cause them to roll on the surface and at the same time to be constrained to indent the surface. Such rolling-indenting interactions result in the formation of isolated chips and surface cracks. The cracks and discontinuity on the surface also cause high stress concentration. As a result the material is cut and removed. The stress fields of a single circular cone of the abrasive particle indenting on silicon crystal with normal and tangential forces can be calculated and analyzed from the modeling equations and boundary conditions. The stresses are expressed with dimensionless stress measures, as functions of normalized geometric parameters. The results show that the maximum normal stress occurs at the indentation point while the maximum shear stress (σzx) occurs below the surface of contact, as expected. Such subsurface shear facilitates the peeling effects of the silicon cracks. Both the normal and tangential forces applied at the contacts are incorporated in the model. The model is very effective in explaining and predicting the behaviors and distributions of stresses during the cutting process, and can be used to determine the optimal geometry of the abrasive particles in the rolling-indenting process.
多晶和结晶锭线锯切片接触应力建模:在硅片生产中的应用
线锯是切割大直径硅片的一种高性价比的表面质量技术。尽管自20世纪90年代初以来,钢丝锯已经被用于切割多晶硅和单晶硅锭,但人们对其基本切割过程知之甚少。我们研究了这一制造过程,并提出了线锯切片的接触应力模型,该模型说明了由浆料携带的线材、铸锭和磨料(例如SiC)之间的相互作用。本文分析了线锯切割硅片时产生的应力。在切割过程中,导线相对于硅锭以高速(5 - 15m /s)运动。浆料中的磨料是在接触表面夹在钢锭和钢丝之间的第三体颗粒。电线施加的力携带磨料颗粒,使它们在表面上滚动,同时被约束在表面上压痕。这种滚动-压痕相互作用导致形成孤立的切屑和表面裂纹。表面的裂纹和不连续也会引起高应力集中。因此,材料被切割和移除。根据所建立的模型方程和边界条件,可以计算和分析磨粒在硅晶体上单圆锥体在法向力和切向力作用下的应力场。应力用无因次应力测度表示,作为归一化几何参数的函数。结果表明:最大法向应力出现在压痕处,最大剪应力(σzx)出现在接触表面以下,与预期一致;这种次表面剪切有利于硅裂纹的剥离效果。在接触处施加的法向力和切向力都包含在模型中。该模型可以很好地解释和预测切削过程中的应力行为和分布,并可用于确定滚压成形过程中磨粒的最佳几何形状。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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