Kai Zhang, Zhiqun Li, Zengqi Wang, Yang Guo, T. Sun
{"title":"A fully integrated CMOS IF module for C-band RF transceiver","authors":"Kai Zhang, Zhiqun Li, Zengqi Wang, Yang Guo, T. Sun","doi":"10.1109/IEEE-IWS.2015.7164545","DOIUrl":null,"url":null,"abstract":"This paper presents a fully integrated IF module which can receive or transmit signal with only one port. The switching time between reception and transmission is less than 3μs. In the state of reception, the IF module can convert differential signal to single-ended signal. Simulation results show 3.2dB power gain and 11.65dBm OP1dB while drawing 45mA from a 3.3V supply. In the state of transmission, the IF module can convert single-ended signal to differential signal. Simulation results show 0~15dB programmable voltage gain and -3.5dBm IP1dB while drawing 16mA from a 3.3V supply. At working frequency of 1.3GHz~1.4GHz, VSWRs can attain high performance in two states, both are less than 1.5* 1. The chip is designed in 0.18μm CMOS technology, the die area is 1.5*1.5 mm2. All the components of the linearization scheme are designed on-chip enabling maintenance of a single chip transceiver solution.","PeriodicalId":164534,"journal":{"name":"2015 IEEE International Wireless Symposium (IWS 2015)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-07-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Wireless Symposium (IWS 2015)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEEE-IWS.2015.7164545","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper presents a fully integrated IF module which can receive or transmit signal with only one port. The switching time between reception and transmission is less than 3μs. In the state of reception, the IF module can convert differential signal to single-ended signal. Simulation results show 3.2dB power gain and 11.65dBm OP1dB while drawing 45mA from a 3.3V supply. In the state of transmission, the IF module can convert single-ended signal to differential signal. Simulation results show 0~15dB programmable voltage gain and -3.5dBm IP1dB while drawing 16mA from a 3.3V supply. At working frequency of 1.3GHz~1.4GHz, VSWRs can attain high performance in two states, both are less than 1.5* 1. The chip is designed in 0.18μm CMOS technology, the die area is 1.5*1.5 mm2. All the components of the linearization scheme are designed on-chip enabling maintenance of a single chip transceiver solution.