A 48 dBm peak power RF switch in SOI process for 5G mMIMO applications

2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2019-01-01 DOI:10.1109/SIRF.2019.8709096

Venkata N. K. Malladi, Monte Miller

引用次数: 6

Abstract

This paper presents an analysis & comparison of GaAs and SOI processes for RF switch designs with applications aimed at 5G massive MIMO RF front end applications. An RF switch in SOI 130 nm process is presented. The switch operates from 0.1-3 GHz and achieves 48 dBm of 1 dB compression point (peak power), 0.5 dB Insertion Loss, 26 dB of isolation at 2.5 GHz.

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用于5G mimo应用的SOI过程中48 dBm峰值功率射频开关

本文介绍了针对5G大规模MIMO射频前端应用的射频开关设计的GaAs和SOI工艺的分析和比较。介绍了一种SOI 130 nm制程射频开关。该开关工作于0.1-3 GHz，在1 dB压缩点(峰值功率)下实现48 dBm, 0.5 dB插入损耗，在2.5 GHz时实现26 dB隔离。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

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