High-efficiency, High-power Class-D Power Amplifier with 50W Output Using GaN Devices

Abstract

GaN (Gallium nitride) semiconductors have more than 10 times the power density of Si-based Latterly Diffused Metal Oxide Semiconductor (LDMOS) transistors used in conventional Power Amplifiers, enabling more than 30% power savings and higher power density and efficiency. In this paper, we design a high-efficiency, high-power Class-D Power Amplifier with output higher than 40W by controlling the full-bridge structure composed of GaN elements using GaN drivers. The proposed Power Amplifier uses the Samsung 180nm process and designs 5 V as supply power.