Low-voltage 9T FinFETSRAM cell for low-power applications

F. Moradi, Mohammad Tohidi
{"title":"Low-voltage 9T FinFETSRAM cell for low-power applications","authors":"F. Moradi, Mohammad Tohidi","doi":"10.1109/SOCC.2015.7406929","DOIUrl":null,"url":null,"abstract":"In this paper, a novel multi-threshold 9T-SRAM cell using FinFET technology with improved read and write margins in comparison with the standard 6T-SRAM cell is proposed. By the use of this bit-cell at supply voltage of 200mV (800mV), read and write margins are improved by 92% (97%) and 2X (40%), respectively. The proposed design operates at supply voltages lower than 300mV that results in a 3X lower power consumption compared to the standard 6T-SRAM cell.","PeriodicalId":329464,"journal":{"name":"2015 28th IEEE International System-on-Chip Conference (SOCC)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 28th IEEE International System-on-Chip Conference (SOCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOCC.2015.7406929","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

In this paper, a novel multi-threshold 9T-SRAM cell using FinFET technology with improved read and write margins in comparison with the standard 6T-SRAM cell is proposed. By the use of this bit-cell at supply voltage of 200mV (800mV), read and write margins are improved by 92% (97%) and 2X (40%), respectively. The proposed design operates at supply voltages lower than 300mV that results in a 3X lower power consumption compared to the standard 6T-SRAM cell.
用于低功耗应用的低压9T finfesram单元
本文提出了一种采用FinFET技术的新型多阈值9T-SRAM单元,与标准6T-SRAM单元相比,该单元具有更高的读写裕度。在供电电压为200mV (800mV)时使用该位单元,读写余量分别提高92%(97%)和2X(40%)。所提出的设计工作在低于300mV的电源电压下,与标准6T-SRAM电池相比,功耗降低了3倍。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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