A V-band power amplifier with 11.9 dB gain in CMOS 90-nm process technology

Abstract

In this paper, a three-stage power amplifier (PA) designed for V-band applications is presented. The proposed PA adopts common-source topology for each stage and is implemented in the CMOS 90-nm process technology. This V-band PA achieves a small signal gain of 11.9dB and a saturated output power of 7.6dBm at the 60GHz operating frequency. The measured peak power added efficiency (PAE) is 4.77%, and its OP1dB is 5dBm. The power consumption of the proposed PA is 97mW from the 1.2V voltage supply.