Excitonic absorption saturation in a strain-balanced InGaAs/InAsP MQW

Abstract

Both linear and nonlinear absorption have been studied in a strain-balanced InAsP/InGaAs structure at room temperature. The sample, known as M552 was grown by solid source MBE. It consisted of 10 periods of 113 /spl Aring/ In/sub 0.44/Ga/sub 0.56/As/103 /spl Aring/ InAs/sub 0.2/P/sub 0.8/ in a pin diode configuration. X-ray diffraction indicated that there was 0.6% tensile strain in the InGaAs well and 0.6% compressive strain in the InAsP barrier. Using a 4 band k.p model which takes into account the strain we calculate the barriers heights seen by the n=l electron, heavy and light hole subbands to be 1O7 meV, 181 meV and 239 meV respectively.