SHF-transistors parameters optimization by germanium doping of silicon monocrystal

11th International Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.01EX487) Pub Date : 2001-09-10 DOI:10.1109/CRMICO.2001.961631

V. Afanas'ev, D. Brinkevich, A. Korzhenevski, V. Prosolovich, Yu.N. Yankovski

引用次数: 0

Abstract

Optimization method of the SHF-transistors parameters has been designed. It is shown that germanium incorporation into SiO/sub 2/ reduces the leakage current and increases the breakdown voltage of MOS-structures.

查看原文本刊更多论文

单晶硅掺杂锗优化shf晶体管参数

设计了shf晶体管参数的优化方法。结果表明，在SiO/ sub2 /中掺入锗可以降低mos结构的泄漏电流，提高mos结构的击穿电压。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

11th International Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.01EX487)

自引率

0.00%

发文量