A 190-GHz amplifier with gain-boosting technique in 65-nm CMOS

Abstract

This paper demonstrates a 190-GHz, 3 stages CMOS amplifier based on cascode topology using 65-nm standard RF CMOS 1P9M technology. To design a high gain amplifier at G-band using CMOS process, the gain-boosting technique is adopted to enhance the maximum stable gain (MSG) performance in this work. Based on the experimental results, the peak gain is 16.3 dB at 190 GHz, with 3-dB bandwidth from 188 to 192 GHz, and the core area of chip size is 0.29 mm2.