A Comparison Between Actively and Passively Matched S-Band GaAs Monolithic FET Amplifiers

1981 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1981-06-15 DOI:10.1109/MWSYM.1981.1129928

R. Pengelly, J. R. Suffolk, J.R. Cockrlll, J. Turner

引用次数: 9

Abstract

The ability to design monolithic GaAs circuits which are insensitive to active and passive component variations is demonstrated. Actively and passively matched monolithic S-band amplifiers are compared in terms of reproducibility, GaAs usage, power consumption and processing complexity.

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主动与被动匹配s波段GaAs单片FET放大器之比较

证明了设计对有源和无源元件变化不敏感的单片砷化镓电路的能力。主动匹配和被动匹配单片s波段放大器在再现性、砷化镓的使用、功耗和处理复杂性方面进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1981 IEEE MTT-S International Microwave Symposium Digest

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