{"title":"Optically-modulated active-gate control (OMAG) for switching electrical power-conversion systems","authors":"S. Mazumder, T. Sarkar","doi":"10.1109/ESTS.2009.4906532","DOIUrl":null,"url":null,"abstract":"Critically important to the future electric ship power systems are performance and reliability parameters such as electromagnetic-noise generated by the power converter, power-conversion efficiency, and stress on the power semiconductor devices (PSDs). Modulation of these parameters using optically-modulated and galvanically isolated gate control is outlined and experimentally demonstrated. An optimal optical-intensity is also experimentally determined for balanced trade-off between switching loss reduction and PSD stress mitigation. Applicability of the concept over a wide spectrum of PSDs (including SiC MOSFET) is also demonstrated.","PeriodicalId":446953,"journal":{"name":"2009 IEEE Electric Ship Technologies Symposium","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE Electric Ship Technologies Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESTS.2009.4906532","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
Critically important to the future electric ship power systems are performance and reliability parameters such as electromagnetic-noise generated by the power converter, power-conversion efficiency, and stress on the power semiconductor devices (PSDs). Modulation of these parameters using optically-modulated and galvanically isolated gate control is outlined and experimentally demonstrated. An optimal optical-intensity is also experimentally determined for balanced trade-off between switching loss reduction and PSD stress mitigation. Applicability of the concept over a wide spectrum of PSDs (including SiC MOSFET) is also demonstrated.