Simulation of p-GaN/ i-InGaN/n-GaN solar cell

Abstract

The III-nitride material system offers substantial potential to develop high-efficiency solar cells. The direct gap of the InxGa1-xN alloy system extends continuously from InN (0.7 eV, in the near IR) to GaN (3.4 eV, in the mid-ultraviolet). In this work, the performances of a solar cell based on InGaN were simulated under the illumination conditions of one sun by employing SILVACO software.