AlN for mirror passivation of high power AlGaAs single quantum well separate confinement heterostructure lasers

Abstract

The authors propose AlN dielectric layer as a mirror coating for AlGaAs SQW-SCH laser diodes. As a semitransparent (low reflective - LR) coating they use a single AlN layer, and as a high reflective coating (HR) they use six pairs of AlN-Si layers. The measured reflection coefficients for LR and HR coatings and optical output power characteristics for coated and uncoated mirrors are presented. The optical output power of diodes with coated mirrors is two times higher than the optical power of uncoated diodes.